GT30N135SRA,S1E
Toshiba Semiconductor and Storage
Product No:
GT30N135SRA,S1E
Manufacturer:
Package:
TO-247
Batch:
-
Datasheet:
-
Description:
D-IGBT TO-247 VCES=1350V IC=30A
Quantity:
In Stock : 16
Minimum: 1 Multiples: 1
Qty
Unit Price
1
3.5055
10
3.15115
25
2.9792
100
2.582005
250
2.449594
500
2.198015
1000
1.853754
2500
1.761062
5000
1.694857
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Product Information
Parameter Info
User Guide
| Mfr | Toshiba Semiconductor and Storage |
| Series | - |
| Package | Tube |
| IGBT Type | - |
| Input Type | Standard |
| Gate Charge | 270 nC |
| Power - Max | 348 W |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Product Status | Active |
| Test Condition | 300V, 60A, 39Ohm, 15V |
| Switching Energy | -, 1.3mJ (off) |
| Td (on/off) @ 25°C | - |
| Operating Temperature | 175°C (TJ) |
| Supplier Device Package | TO-247 |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 60A |
| Current - Collector (Ic) (Max) | 60 A |
| Current - Collector Pulsed (Icm) | 120 A |
| Voltage - Collector Emitter Breakdown (Max) | 1350 V |
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30,000,000Standard Product Unit
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15,000 ㎡In-stock Warehouse
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