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GT30J65MRB,S1E
Toshiba Semiconductor and Storage
Product No:
GT30J65MRB,S1E
Manufacturer:
Package:
TO-3P(N)
Batch:
-
Datasheet:
-
Description:
650V SILICON N-CHANNEL IGBT, TO-
Quantity:
In Stock : 61
Minimum: 1 Multiples: 1
Qty
Unit Price
1
2.4035
10
1.99785
100
1.590395
500
1.345694
1000
1.141805
2000
1.08472
5000
1.043936
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Product Information
Parameter Info
User Guide
| Mfr | Toshiba Semiconductor and Storage |
| Series | - |
| Package | Tube |
| IGBT Type | - |
| Input Type | Standard |
| Gate Charge | 70 nC |
| Power - Max | 200 W |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Product Status | Active |
| Test Condition | 400V, 15A, 56Ohm, 15V |
| Switching Energy | 1.4mJ (on), 220µJ (off) |
| Base Product Number | GT30J65 |
| Td (on/off) @ 25°C | 75ns/400ns |
| Operating Temperature | 175°C (TJ) |
| Supplier Device Package | TO-3P(N) |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 30A |
| Reverse Recovery Time (trr) | 200 ns |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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