GT15J341,S4X

Toshiba Semiconductor and Storage

Product No:

GT15J341,S4X

Package:

TO-220SIS

Batch:

-

Datasheet:

-

Description:

PB-F DISCRETE IGBT TRANSISTOR TO

Quantity:

In Stock : 50

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1

    1.691

  • 10

    1.40125

  • 100

    1.11511

  • 500

    0.943578

  • 1000

    0.800603

  • 2000

    0.76058

  • 5000

    0.731984

  • 10000

    0.70775

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Product Information

Parameter Info
User Guide
Mfr Toshiba Semiconductor and Storage
Series -
Package Tube
IGBT Type -
Input Type Standard
Power - Max 30 W
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Product Status Active
Test Condition 300V, 15A, 33Ohm, 15V
Switching Energy 300µJ (on), 300µJ (off)
Td (on/off) @ 25°C 60ns/170ns
Operating Temperature 150°C (TJ)
Supplier Device Package TO-220SIS
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 15A
Reverse Recovery Time (trr) 80 ns
Current - Collector (Ic) (Max) 15 A
Current - Collector Pulsed (Icm) 60 A
Voltage - Collector Emitter Breakdown (Max) 600 V