BSM300C12P3E301

Rohm Semiconductor

Product No:

BSM300C12P3E301

Manufacturer:

Rohm Semiconductor

Package:

Module

Batch:

-

Datasheet:

-

Description:

SICFET N-CH 1200V 300A MODULE

Quantity:

In Stock : Please Inquiry

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Product Information

Parameter Info
User Guide
Mfr Rohm Semiconductor
Series -
Package Bulk
FET Type N-Channel
Vgs (Max) +22V, -4V
Technology SiCFET (Silicon Carbide)
FET Feature Standard
Package / Case Module
Product Status Active
Vgs(th) (Max) @ Id 5.6V @ 80mA
Base Product Number BSM300
Operating Temperature -40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs -
Power Dissipation (Max) 1360W (Tc)
Supplier Device Package Module
Drain to Source Voltage (Vdss) 1200 V
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On) -
Current - Continuous Drain (Id) @ 25°C 300A (Tc)