G5S06510QT

Global Power Technology-GPT

Product No:

G5S06510QT

Package:

4-DFN (8x8)

Batch:

-

Datasheet:

Description:

DIODE SIL CARBIDE 650V 53A 4DFN

Quantity:

In Stock : Please Inquiry

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Product Information

Parameter Info
User Guide
Mfr Global Power Technology-GPT
Speed No Recovery Time > 500mA (Io)
Series -
Package Cut Tape (CT)
Technology SiC (Silicon Carbide) Schottky
Mounting Type Surface Mount
Package / Case 4-PowerTSFN
Product Status Active
Capacitance @ Vr, F 645pF @ 0V, 1MHz
Supplier Device Package 4-DFN (8x8)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 50 µA @ 650 V
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 53A
Operating Temperature - Junction -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 10 A